Furtado, Henrique SilvaBernardes, Américo TristãoMachado, Romuel FigueiredoSilva, Carlos Antônio da2012-06-052012-06-052009FURTADO, H. S. et al. Numerical simulation of solute trapping phenomena using phase-field solidification model for dilute binary alloys. Materials Research, v. 12, n.3, p.345-351, 2009. Disponível em: <http://www.scielo.br/pdf/mr/v12n3/v12n3a16.pdf>. Acesso em: 05 jun. 2012.15161439http://www.repositorio.ufop.br/handle/123456789/819Numerical simulation of solute trapping phenomena using phase-field solidification model for dilute binary alloys Numerical simulation of solute trapping during solidification, using two phase-field model for dilute binary alloys developed by Kim et al. [Phys. Rev. E, 60, 7186 (1999)] and Ramirez et al. [Phys. Rev. E, 69, 05167 (2004)] is presented here. The simulations on dilute Cu-Ni alloy are in good agreement with one dimensional analytic solution of sharp interface model. Simulation conducted under small solidification velocity using solid liquid interface thickness (2λ) of 8 nanometers reproduced the solute (Cu) equilibrium partition coefficient. The spurious numerical solute trapping in solid phase, due to the interface thickness was negligible. A parameter used in analytical solute trapping model was determined by isothermal phase-field simulation of Ni-Cu alloy. Its application to Si-As and Si-Bi alloys reproduced results that agree reasonably well with experimental data. A comparison between the three models of solute trapping (Aziz, Sobolev and Galenko [Phys. Rev. E, 76, 031606 (2007)]) was performed. It resulted in large differences in predicting the solidification velocity for partition-less solidification, indicating the necessity for new and more acute experimental data.en-USPhase-fieldSolute trappingDilute alloysSolidificationArtigo publicado em periodicoAutorização concedida ao Repositório Institucional da UFOP pelo Periódico Materials Research em 25/10/2013 para depositar uma cópia eletrônica dos artigos publicados por esse periódico em que ao menos um dos autores é aluno ou professor da UFOP.