Manhabosco, Taíse MatteAloni, ShaulKuykendall, Tevye R.Manhabosco, Sara MatteBatista, Ana BárbaraSoares, Jaqueline dos SantosBarboza, Ana Paula MoreiraOliveira, Alan Barros deBatista, Ronaldo Junio CamposUrban, Jeffrey J.2020-08-132020-08-132019MANHABOSCO, T. M. et al. Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. Recent Progress in Materials, v. 1, n. 4, out. 2019. Disponível em: <https://www.lidsen.com/journals/rpm/rpm-01-04-005>. Acesso em: 03 jul. 2020.2689-5846http://www.repositorio.ufop.br/handle/123456789/12589Tin telluride (SnTe) ultrathin films were deposited electrochemically on polycrystalline and monocrystalline gold substrates using the electrochemical atomic layer epitaxy (ECALE) method. The electrochemical behaviors of Sn and Te were studied systematically by means of cyclic voltammetry. Cyclic voltammetry curves for Sn displayed a broad peak in the region between -0.15 V and -0.35 V, which was related to the under-potential deposition (UPD), while the curves for Te displayed a peak at 0.3 V for Te UPD. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM) were employed for the characterization of the ultrathin SnTe films. XRD and Raman spectroscopy confirmed the deposition of a single SnTe phase, while SEM revealed that the deposits were composed of nanocrystallites.en-USabertoUnder-potential depositionArtigo publicado em periodicoThis is an open access article distributed under the conditions of the Creative Commons by Attribution License, which permits unrestricted use, distribution, and reproduction in any medium or format, provided the original work is correctly cited. Fonte: o próprio artigo.https://doi.org/10.21926/rpm.1904005